STPSC10065DY STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 4.8 EUR |
| 10+ | 2.66 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.34 EUR |
| 1000+ | 2.32 EUR |
| 2000+ | 2.11 EUR |
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Technische Details STPSC10065DY STMicroelectronics
Description: DIODE SIL CARB 650V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC10065DY nach Preis ab 2.55 EUR bis 7.18 EUR
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STPSC10065DY | Hersteller : STMicroelectronics |
 Description: DIODE SIL CARB 650V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 1012 Stücke: Lieferzeit 10-14 Tag (e) |
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