STPSC10065GY-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 626 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.3 EUR |
10+ | 4.45 EUR |
100+ | 3.6 EUR |
500+ | 3.2 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC10065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Grade: Automotive, Qualification: AEC-Q101.
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auf Bestellung 1000 Stücke: Lieferzeit 693-697 Tag (e) |
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STPSC10065GY-TR | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STPSC10065GY-TR - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 34 nC, TO-263 (D2PAK) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 34nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC10065GY-TR | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STPSC10065GY-TR - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 34 nC, TO-263 (D2PAK) tariffCode: 85411000 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Diodenmontage: Oberflächenmontage |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC10065GY-TR | Hersteller : STMicroelectronics | Rectifier Diode Schottky SiC 650V 10A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
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STPSC10065GY-TR | Hersteller : STMicroelectronics | Rectifier Diode Schottky SiC 650V 10A Automotive 3-Pin(2+Tab) D2PAK T/R |
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STPSC10065GY-TR | Hersteller : STMicroelectronics | Rectifier Diode Schottky SiC 650V 10A Automotive 3-Pin(2+Tab) D2PAK T/R |
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STPSC10065GY-TR | Hersteller : STMicroelectronics | Rectifier Diode Schottky SiC 650V 10A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
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STPSC10065GY-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: D2PAK Kind of package: reel; tape Leakage current: 0.9mA Max. forward impulse current: 210A Application: automotive industry Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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STPSC10065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 670pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Current - Reverse Leakage @ Vr: 130 µA @ 650 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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STPSC10065GY-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 22A Semiconductor structure: single diode Max. forward voltage: 1.65V Case: D2PAK Kind of package: reel; tape Leakage current: 0.9mA Max. forward impulse current: 210A Application: automotive industry |
Produkt ist nicht verfügbar |