STPSC10065GY-TR STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.33 EUR |
| 10+ | 5.32 EUR |
| 100+ | 4.32 EUR |
| 250+ | 4.06 EUR |
| 500+ | 3.81 EUR |
| 1000+ | 3.08 EUR |
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Technische Details STPSC10065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STPSC10065GY-TR nach Preis ab 3.33 EUR bis 8.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STPSC10065GY-TR | STMicroelectronics |
 Description: DIODE SIL CARBIDE 650V 10A D2PAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 130 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 670pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC10065GY-TR |
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Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.55 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.33 EUR |