STPSC10065GY-TR STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 5.32 EUR |
| 10+ | 4.47 EUR |
| 100+ | 3.63 EUR |
| 250+ | 3.41 EUR |
| 500+ | 3.2 EUR |
| 1000+ | 2.59 EUR |
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Technische Details STPSC10065GY-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote STPSC10065GY-TR nach Preis ab 2.8 EUR bis 7.16 EUR
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STPSC10065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 130 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 670pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 611 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10065GY-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 10A D2PAKQualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 130 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 670pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |

