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STPSC10065GY-TR

STPSC10065GY-TR STMicroelectronics


stpsc10065_y-1851701.pdf
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 10 A SiC Power Schottky Diode
auf Bestellung 958 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.32 EUR
10+4.47 EUR
100+3.63 EUR
250+3.41 EUR
500+3.2 EUR
1000+2.59 EUR
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Technische Details STPSC10065GY-TR STMicroelectronics

Description: DIODE SIL CARBIDE 650V 10A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

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STPSC10065GY-TR STPSC10065GY-TR Hersteller : STMicroelectronics en.DM00403688.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.16 EUR
10+4.66 EUR
100+3.41 EUR
500+2.8 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10065GY-TR STPSC10065GY-TR Hersteller : STMicroelectronics en.DM00403688.pdf Description: DIODE SIL CARBIDE 650V 10A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Im Einkaufswagen  Stück im Wert von  UAH