STPSC10H12CWL STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
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Technische Details STPSC10H12CWL STMicroelectronics
Description: DIODE ARR SIC 1200V 19A TO247-3, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 19A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STPSC10H12CWL nach Preis ab 6.67 EUR bis 13.38 EUR
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STPSC10H12CWL | Hersteller : STMicroelectronics |
Description: DIODE ARR SIC 1200V 19A TO247-3 Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 19A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
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