STPSC10H12CWL STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V, 10 A dual High Surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.95 EUR |
| 10+ | 7.25 EUR |
| 100+ | 6.87 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC10H12CWL STMicroelectronics
Description: DIODE ARR SIC 1200V 19A TO247-3, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 19A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STPSC10H12CWL nach Preis ab 7.94 EUR bis 15.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STPSC10H12CWL | STMicroelectronics |
Description: DIODE ARR SIC 1200V 19A TO247-3 Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 19A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 153 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC10H12CWL |
|
Hersteller: STMicroelectronics
Description: DIODE ARR SIC 1200V 19A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARR SIC 1200V 19A TO247-3
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 19A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 153 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.92 EUR |
| 10+ | 10.82 EUR |
| 100+ | 7.94 EUR |