STPSC10H12D STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 10A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 2+ | 8.87 EUR |
| 50+ | 4.59 EUR |
| 100+ | 4.15 EUR |
| 500+ | 3.88 EUR |
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Technische Details STPSC10H12D STMicroelectronics
Description: DIODE SIL CARB 1200V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote STPSC10H12D nach Preis ab 4.51 EUR bis 9.26 EUR
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STPSC10H12D | Hersteller : STMicroelectronics |
SiC Schottky Diodes 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC10H12D | Hersteller : STM |
Група товару: Діоди та діодні збірки Од. вим: шт |
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