STPSC10H12DY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1.2KV 10A TO220AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Qualification: AEC-Q101
Grade: Automotive
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 3+ | 8.5 EUR |
| 50+ | 4.82 EUR |
| 100+ | 4.44 EUR |
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Technische Details STPSC10H12DY STMicroelectronics
Description: DIODE SIL CARB 1.2KV 10A TO220AC, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Qualification: AEC-Q101, Grade: Automotive, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote STPSC10H12DY nach Preis ab 4.17 EUR bis 8.64 EUR
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STPSC10H12DY | Hersteller : STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode |
auf Bestellung 1243 Stücke: Lieferzeit 10-14 Tag (e) |
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