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STPSC10H12G2-TR

STPSC10H12G2-TR STMicroelectronics


stpsc10h12g2-tr.pdf
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1.2KV 10A D2PAK
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 864 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.66 EUR
10+7.27 EUR
100+5.89 EUR
500+5.23 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STPSC10H12G2-TR STMicroelectronics

Description: DIODE SIL CARB 1.2KV 10A D2PAK, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK HV, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A.

Weitere Produktangebote STPSC10H12G2-TR nach Preis ab 4.1 EUR bis 8.73 EUR

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STPSC10H12G2-TR STPSC10H12G2-TR Hersteller : STMicroelectronics stpsc10h12g2-tr.pdf SiC Schottky Diodes 1200V, 10A, silicon carbide power Schottky Diode
auf Bestellung 638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.73 EUR
10+6.12 EUR
100+4.56 EUR
500+4.1 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H12G2-TR STPSC10H12G2-TR Hersteller : STMicroelectronics stpsc10h12g2-tr.pdf Description: DIODE SIL CARB 1.2KV 10A D2PAK
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK HV
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH