STPSC10H12GY-TR STMicroelectronics
Hersteller: STMicroelectronics
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
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Technische Details STPSC10H12GY-TR STMicroelectronics
Description: DIODE SIL CARB 1200V 10A D2PAK, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote STPSC10H12GY-TR nach Preis ab 2.94 EUR bis 11.63 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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STPSC10H12GY-TR | STMicroelectronics |
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC10H12GY-TR | STMicroelectronics |
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 631 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC10H12GY-TR | STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H12GY-TR | STMicroelectronics |
Description: DIODE SIL CARB 1200V 10A D2PAKMounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 725pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Current - Reverse Leakage @ Vr: 60 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: D2PAK |
auf Bestellung 67 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H12GY-TR | STMicroelectronics |
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 |
auf Bestellung 631 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STPSC10H12GY-TR |
![]() |
Hersteller: STMicroelectronics
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.19 EUR |
| STPSC10H12GY-TR |
![]() |
Hersteller: STMicroelectronics
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 3.3 EUR |
| 54+ | 3.2 EUR |
| 100+ | 3.09 EUR |
| 250+ | 3.02 EUR |
| 500+ | 2.94 EUR |
| STPSC10H12GY-TR |
![]() |
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.27 EUR |
| 10+ | 7.25 EUR |
| 100+ | 5.34 EUR |
| 500+ | 4.82 EUR |
| 1000+ | 4.71 EUR |
| STPSC10H12GY-TR |
![]() |
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Description: DIODE SIL CARB 1200V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
auf Bestellung 67 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.63 EUR |
| 10+ | 7.77 EUR |
| STPSC10H12GY-TR |
![]() |
Hersteller: STMicroelectronics
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
Diode Schottky SiC 1.2KV 10A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)



