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STPSC10H12GY-TR STMicroelectronics


en.DM00295265.pdf
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 10A D2PAK
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.39 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details STPSC10H12GY-TR STMicroelectronics

Description: DIODE SIL CARB 1200V 10A D2PAK, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.

Weitere Produktangebote STPSC10H12GY-TR nach Preis ab 4.93 EUR bis 5.43 EUR

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STPSC10H12GY-TR STPSC10H12GY-TR STMicroelectronics en.DM00295265.pdf Description: DIODE SIL CARB 1200V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
auf Bestellung 1007 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.05 EUR
10+5.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H12GY-TR STPSC10H12GY-TR STMicroelectronics en.DM00295265.pdf SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
auf Bestellung 7762 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.43 EUR
10+5.34 EUR
100+4.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H12GY-TR en.DM00295265.pdf
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 10A D2PAK
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: D2PAK
auf Bestellung 1007 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.05 EUR
10+5.01 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STPSC10H12GY-TR en.DM00295265.pdf
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 1200 V, 10 A Silicon Carbide Power Schottky Diode
auf Bestellung 7762 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.43 EUR
10+5.34 EUR
100+4.93 EUR
Im Einkaufswagen  Stück im Wert von  UAH