STPSC10H12WL STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.06 EUR |
| 10+ | 5.15 EUR |
| 100+ | 4.38 EUR |
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Technische Details STPSC10H12WL STMicroelectronics
Description: DIODE SIL CARB 1.2KV 10A DO247, Packaging: Tube, Package / Case: DO-247-2 (Straight Leads), Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DO-247, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote STPSC10H12WL nach Preis ab 5.08 EUR bis 9.92 EUR
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STPSC10H12WL | STMicroelectronics |
Description: DIODE SIL CARB 1.2KV 10A DO247 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 725pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
auf Bestellung 376 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC10H12WL |
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Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1.2KV 10A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 10A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.92 EUR |
| 30+ | 5.99 EUR |
| 120+ | 5.08 EUR |