Technische Details STPSC10H12WL STMicroelectronics
Description: DIODE SIL CARB 1200V 10A DO247, Packaging: Tube, Package / Case: DO-247-2 (Straight Leads), Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 725pF @ 0V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DO-247, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V.
Weitere Produktangebote STPSC10H12WL nach Preis ab 4.9 EUR bis 11.91 EUR
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STPSC10H12WL | STMicroelectronics |
 Diode Schottky SiC 1.2KV 10A 2-Pin DO-247 Tube |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC10H12WL | STMicroelectronics |
SiC Schottky Diodes 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC10H12WL | STMicroelectronics |
Description: DIODE SIL CARB 1200V 10A DO247 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 725pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 60 µA @ 1200 V |
auf Bestellung 130 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC10H12WL |
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Hersteller: STMicroelectronics
Diode Schottky SiC 1.2KV 10A 2-Pin DO-247 Tube
Diode Schottky SiC 1.2KV 10A 2-Pin DO-247 Tube
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 9.08 EUR |
| STPSC10H12WL |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode
SiC Schottky Diodes 1200 V, 10 A High Surge Silicon Carbide Power Schottky Diode
auf Bestellung 377 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.69 EUR |
| 10+ | 6.64 EUR |
| 100+ | 5.53 EUR |
| 600+ | 5.34 EUR |
| 1200+ | 5.01 EUR |
| 3000+ | 4.9 EUR |
| STPSC10H12WL |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 10A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Description: DIODE SIL CARB 1200V 10A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 725pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.91 EUR |
| 30+ | 6.76 EUR |
| 120+ | 5.63 EUR |