STPSC12065D STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
| Anzahl | Preis |
|---|---|
| 3+ | 6.79 EUR |
| 10+ | 4.49 EUR |
| 100+ | 3.18 EUR |
| 500+ | 2.62 EUR |
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Technische Details STPSC12065D STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 12 A, Current - Reverse Leakage @ Vr: 150 µA @ 650 V.
Weitere Produktangebote STPSC12065D nach Preis ab 2.45 EUR bis 6.95 EUR
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STPSC12065D | Hersteller : STMicroelectronics |
SiC Schottky Diodes 650 V power Schottky silicon carbide diode |
auf Bestellung 489 Stücke: Lieferzeit 10-14 Tag (e) |
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