STPSC12C065DY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC
Current - Reverse Leakage @ Vr: 120 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 530pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 3+ | 6.14 EUR |
| 10+ | 5.15 EUR |
| 100+ | 4.17 EUR |
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Technische Details STPSC12C065DY STMicroelectronics
Description: DIODE SIL CARB 650V 12A TO220AC, Current - Reverse Leakage @ Vr: 120 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 530pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Qualification: AEC-Q101.
Weitere Produktangebote STPSC12C065DY nach Preis ab 3.12 EUR bis 6.42 EUR
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STPSC12C065DY | Hersteller : STMicroelectronics |
Schottky Diodes & Rectifiers Automotive 650 V, 12 A SiC Power Schottky Diode |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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