STPSC16H065AW STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.28 EUR |
| 10+ | 5.97 EUR |
| 25+ | 5.95 EUR |
| 100+ | 5.46 EUR |
| 600+ | 5.24 EUR |
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Technische Details STPSC16H065AW STMicroelectronics
Description: DIODE SIL CARB 650V 16A TO247-3, Current - Reverse Leakage @ Vr: 140 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io): 16A, Capacitance @ Vr, F: 750pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STPSC16H065AW
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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STPSC16H065AW | STMicroelectronics |
Description: DIODE SIL CARB 650V 16A TO247-3 Current - Reverse Leakage @ Vr: 140 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io): 16A Capacitance @ Vr, F: 750pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 600 Stücke Im Einkaufswagen Stück im Wert von UAH |
| STPSC16H065AW |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 16A TO247-3
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 16A TO247-3
Current - Reverse Leakage @ Vr: 140 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 16 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io): 16A
Capacitance @ Vr, F: 750pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
Im Einkaufswagen
Stück im Wert von UAH