STPSC20065CWL STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 10A TO247
Current - Reverse Leakage @ Vr: 130 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247 Long Leads
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 670pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details STPSC20065CWL STMicroelectronics
Description: DIODE SIL CARB 650V 10A TO247, Current - Reverse Leakage @ Vr: 130 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247 Long Leads, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 670pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STPSC20065CWL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| STPSC20065CWL | Hersteller : STMicroelectronics | SiC Schottky Diodes 650 V, dual 10 A, power Schottky silicon carbide diode |
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