STPSC20G12WL STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.57 EUR |
| 10+ | 9.59 EUR |
| 600+ | 7.08 EUR |
| 1200+ | 6.66 EUR |
| 3000+ | 6.64 EUR |
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Technische Details STPSC20G12WL STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1548pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247 LL, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 150 µA @ 1200 V.
Weitere Produktangebote STPSC20G12WL nach Preis ab 10.7 EUR bis 19.35 EUR
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STPSC20G12WL | STMicroelectronics |
Description: DIODE SIC 1.2KV 20A DO247 LL Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1548pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-247 LL Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 150 µA @ 1200 V |
auf Bestellung 63 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC20G12WL |
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Hersteller: STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1548pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Description: DIODE SIC 1.2KV 20A DO247 LL
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1548pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
auf Bestellung 63 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.35 EUR |
| 30+ | 10.7 EUR |