STPSC20G12WLY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Qualification: AEC-Q101
| Anzahl | Preis |
|---|---|
| 2+ | 17.25 EUR |
| 30+ | 8.95 EUR |
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Technische Details STPSC20G12WLY STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247 LL, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 150 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC20G12WLY nach Preis ab 9.63 EUR bis 18.88 EUR
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STPSC20G12WLY | Hersteller : STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode |
auf Bestellung 571 Stücke: Lieferzeit 10-14 Tag (e) |
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