STPSC20G12WLY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247 LL
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Qualification: AEC-Q101
Produktrezensionen
Produktbewertung abgeben
Technische Details STPSC20G12WLY STMicroelectronics
Description: DIODE SIC 1.2KV 20A DO247 LL, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247 LL, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 150 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC20G12WLY nach Preis ab 11.46 EUR bis 22.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
STPSC20G12WLY | STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode |
auf Bestellung 571 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC20G12WLY |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
SiC Schottky Diodes Automotive 1200 V, 20A power Schottky High Surge silicon carbide diode
auf Bestellung 571 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.47 EUR |
| 10+ | 13.47 EUR |
| 600+ | 12.04 EUR |
| 1200+ | 11.46 EUR |