STPSC20H12CWY STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE ARR SIC 1200V 10A TO247-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 2+ | 13.82 EUR |
| 30+ | 11.58 EUR |
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Technische Details STPSC20H12CWY STMicroelectronics
Description: DIODE ARR SIC 1200V 10A TO247-3, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 60 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 10A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote STPSC20H12CWY nach Preis ab 9.36 EUR bis 14.26 EUR
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STPSC20H12CWY | Hersteller : STMicroelectronics |
SiC Schottky Diodes 20 A 1200 V power Schottky silicon carbide diode |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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