STPSC20H12G2Y-TR
Produktcode: 186140
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Lieblingsprodukt
Hersteller:
Dioden, Diodenbrücken, Zenerdioden > Schottkydioden
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Weitere Produktangebote STPSC20H12G2Y-TR nach Preis ab 8.08 EUR bis 19.15 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STPSC20H12G2Y-TR | STMicroelectronics |
Description: DIODE SIC 1.2KV 20A D2PAK HV Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1650pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK HV Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20H12G2Y-TR | STMicroelectronics |
Description: DIODE SIC 1.2KV 20A D2PAK HV Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1650pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK HV Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1243 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20H12G2Y-TR | STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode |
auf Bestellung 1160 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC20H12G2Y-TR |
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Hersteller: STMicroelectronics
Description: DIODE SIC 1.2KV 20A D2PAK HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIC 1.2KV 20A D2PAK HV
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 8.08 EUR |
| STPSC20H12G2Y-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 1.2KV 20A D2PAK HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIC 1.2KV 20A D2PAK HV
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK HV
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1243 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.04 EUR |
| 10+ | 13.08 EUR |
| 100+ | 9.89 EUR |
| STPSC20H12G2Y-TR |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode
auf Bestellung 1160 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.15 EUR |
| 10+ | 13.23 EUR |
| 100+ | 10.01 EUR |
| 1000+ | 9.34 EUR |