STPSC20H12GY-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
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Technische Details STPSC20H12GY-TR STMicroelectronics
Description: DIODE SIL CARB 1200V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1650pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC20H12GY-TR nach Preis ab 7.6 EUR bis 16.32 EUR
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STPSC20H12GY-TR | STMicroelectronics |
Description: DIODE SIL CARB 1200V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1650pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V Qualification: AEC-Q101 |
auf Bestellung 1256 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC20H12GY-TR | STMicroelectronics |
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
|
| STPSC20H12GY-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 1200V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.1 EUR |
| 10+ | 11.14 EUR |
| 100+ | 8.84 EUR |
| 500+ | 7.6 EUR |
| STPSC20H12GY-TR |
|
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode
SiC Schottky Diodes Automotive 1200 V, 20 A Silicon Carbide Diode
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.32 EUR |
| 10+ | 11.35 EUR |
| 100+ | 9.49 EUR |
| 500+ | 9.47 EUR |
| 1000+ | 8.06 EUR |