STPSC20H12WL STMicroelectronics
Hersteller: STMicroelectronics
Schottky Diodes & Rectifiers 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 18.62 EUR |
| 10+ | 15.96 EUR |
| 100+ | 13.3 EUR |
| 250+ | 12.76 EUR |
| 600+ | 11.73 EUR |
| 1200+ | 10.56 EUR |
| 3000+ | 10.08 EUR |
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Technische Details STPSC20H12WL STMicroelectronics
Description: DIODE SIL CARB 1.2KV 20A DO247, Packaging: Tube, Package / Case: DO-247-2 (Straight Leads), Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1650pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V.
Weitere Produktangebote STPSC20H12WL nach Preis ab 13.34 EUR bis 18.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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STPSC20H12WL | STMicroelectronics |
Description: DIODE SIL CARB 1.2KV 20A DO247 Packaging: Tube Package / Case: DO-247-2 (Straight Leads) Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1650pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: DO-247 Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 120 µA @ 1200 V |
auf Bestellung 154 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC20H12WL |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1.2KV 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.68 EUR |
| 30+ | 14.91 EUR |
| 120+ | 13.34 EUR |