STPSC20H12WL STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1.2KV 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 20A DO247
Packaging: Tube
Package / Case: DO-247-2 (Straight Leads)
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1650pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-247
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 120 µA @ 1200 V
auf Bestellung 484 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 22.98 EUR |
30+ | 18.34 EUR |
120+ | 16.41 EUR |
Produktrezensionen
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Technische Details STPSC20H12WL STMicroelectronics
Description: DIODE SIL CARB 1.2KV 20A DO247, Packaging: Tube, Package / Case: DO-247-2 (Straight Leads), Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1650pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-247, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V.
Weitere Produktangebote STPSC20H12WL nach Preis ab 12.51 EUR bis 23.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC20H12WL | Hersteller : STMicroelectronics | Schottky Diodes & Rectifiers 1200 V, 20 A High surge Silicon Carbide Power Schottky Diode |
auf Bestellung 394 Stücke: Lieferzeit 14-28 Tag (e) |
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STPSC20H12WL | Hersteller : STMicroelectronics | Diode Schottky SiC 1.2KV 20A 2-Pin DO-247 Tube |
Produkt ist nicht verfügbar |
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STPSC20H12WL | Hersteller : STMicroelectronics | Diode Schottky SiC 1.2KV 20A 2-Pin DO-247 Tube |
Produkt ist nicht verfügbar |
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STPSC20H12WL | Hersteller : STMicroelectronics | Diode Schottky SiC 1.2KV 20A 2-Pin DO-247 Tube |
Produkt ist nicht verfügbar |
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STPSC20H12WL | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 1.2kV; 20A; DO247; tube; Ir: 800uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 38A Semiconductor structure: single diode Case: DO247 Kind of package: tube Max. forward impulse current: 700A Max. forward voltage: 2.25V Leakage current: 0.8mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STPSC20H12WL | Hersteller : STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 1.2kV; 20A; DO247; tube; Ir: 800uA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 38A Semiconductor structure: single diode Case: DO247 Kind of package: tube Max. forward impulse current: 700A Max. forward voltage: 2.25V Leakage current: 0.8mA |
Produkt ist nicht verfügbar |