STPSC2H12D STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 1200V 2A TO220AC
Current - Reverse Leakage @ Vr: 12 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Technische Details STPSC2H12D STMicroelectronics
Description: DIODE SIL CARB 1200V 2A TO220AC, Current - Reverse Leakage @ Vr: 12 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 190pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Weitere Produktangebote STPSC2H12D nach Preis ab 1.95 EUR bis 2.87 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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STPSC2H12D | STMicroelectronics |
SiC Schottky Diodes 1200 V power Schottky silicon carbide diode |
auf Bestellung 6810 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC2H12D |
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Hersteller: STMicroelectronics
SiC Schottky Diodes 1200 V power Schottky silicon carbide diode
SiC Schottky Diodes 1200 V power Schottky silicon carbide diode
auf Bestellung 6810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.87 EUR |
| 10+ | 2.15 EUR |
| 100+ | 2.03 EUR |
| 1000+ | 1.95 EUR |