Produkte > STMICROELECTRONICS > STPSC30G065L2Y
STPSC30G065L2Y

STPSC30G065L2Y STMicroelectronics


stpsc30g065l2y.pdf
Hersteller: STMicroelectronics
Description: 650V 30A HIGH SURGE SILICON CARB
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1890pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: HU3PAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 600 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.06 EUR
10+10.14 EUR
25+9.41 EUR
100+8.61 EUR
250+8.23 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STPSC30G065L2Y STMicroelectronics

Description: 650V 30A HIGH SURGE SILICON CARB, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1890pF @ 0V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: HU3PAK, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V, Qualification: AEC-Q101.

Weitere Produktangebote STPSC30G065L2Y

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STPSC30G065L2Y STPSC30G065L2Y Hersteller : STMicroelectronics stpsc30g065l2y.pdf Description: 650V 30A HIGH SURGE SILICON CARB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1890pF @ 0V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: HU3PAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 30 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH