STPSC40065CWY STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 40 A dual SiC Power Schottky Diode
| Anzahl | Privatkunde |
|---|---|
| 1+ | 17.3 EUR |
| 10+ | 11.9 EUR |
| 100+ | 10.56 EUR |
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Technische Details STPSC40065CWY STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC40065CWY nach Preis ab 12.85 EUR bis 24.42 EUR
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STPSC40065CWY | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247; Ir: 2mA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 1.65V Max. forward impulse current: 0.4kA Leakage current: 2mA Kind of package: tube Application: automotive industry Max. load current: 40A |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC40065CWY | STMicroelectronics |
Description: DIODE SIL CARB 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 207 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC40065CWY | STMicroelectronics |
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auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STPSC40065CWY |
|
Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247; Ir: 2mA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 1.65V
Max. forward impulse current: 0.4kA
Leakage current: 2mA
Kind of package: tube
Application: automotive industry
Max. load current: 40A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247; Ir: 2mA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 1.65V
Max. forward impulse current: 0.4kA
Leakage current: 2mA
Kind of package: tube
Application: automotive industry
Max. load current: 40A
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.28 EUR |
| STPSC40065CWY |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1250pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A
Current - Reverse Leakage @ Vr: 300 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.42 EUR |
| 10+ | 17.03 EUR |
| 100+ | 12.85 EUR |
| STPSC40065CWY |
|
Hersteller: STMicroelectronics
auf Bestellung 200 Stücke:
Lieferzeit 21-28 Tag (e)