STPSC40065CWY STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes Automotive 650 V, 40 A dual SiC Power Schottky Diode
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Technische Details STPSC40065CWY STMicroelectronics
Description: DIODE SIL CARB 650V 20A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1250pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247-3, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A, Current - Reverse Leakage @ Vr: 300 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote STPSC40065CWY nach Preis ab 10.8 EUR bis 20.52 EUR
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STPSC40065CWY | Hersteller : STMicroelectronics |
Description: DIODE SIL CARB 650V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1250pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 20 A Current - Reverse Leakage @ Vr: 300 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 207 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC40065CWY | Hersteller : STMicroelectronics |
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auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) |