STPSC406B-TR STMicroelectronics
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Technische Details STPSC406B-TR STMicroelectronics
Description: DIODE SIL CARBIDE 600V 4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 200pF @ 0V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: DPAK, Operating Temperature - Junction: -40°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Weitere Produktangebote STPSC406B-TR nach Preis ab 1.16 EUR bis 3.82 EUR
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STPSC406B-TR | STMicroelectronics |
SiC Schottky Diodes 600 V Power Schottky Diode |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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STPSC406B-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 200pF @ 0V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: DPAK Operating Temperature - Junction: -40°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
auf Bestellung 3342 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC406B-TR |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| STPSC406B-TR |
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Hersteller: STMicroelectronics
SiC Schottky Diodes 600 V Power Schottky Diode
SiC Schottky Diodes 600 V Power Schottky Diode
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.28 EUR |
| 2500+ | 1.17 EUR |
| 5000+ | 1.16 EUR |
| STPSC406B-TR |
|
Hersteller: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 200pF @ 0V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: DPAK
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 4 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
auf Bestellung 3342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.82 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.33 EUR |
| STPSC406B-TR |
|
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)