STPSC40H12CWY STMicroelectronics
Hersteller: STMicroelectronics
SiC Schottky Diodes 2x20A 1200V Power Schottky Silicon Carbide Diode Automotive
| Anzahl | Preis |
|---|---|
| 1+ | 28.92 EUR |
| 10+ | 21.82 EUR |
| 25+ | 21.77 EUR |
| 100+ | 17.71 EUR |
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Technische Details STPSC40H12CWY STMicroelectronics
Description: DIODE ARRAY SIC 1200V 20A TO-247, Current - Reverse Leakage @ Vr: 120 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -40°C ~ 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io) (per Diode): 20A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.
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STPSC40H12CWY | Hersteller : STMicroelectronics |
Description: DIODE ARRAY SIC 1200V 20A TO-247Current - Reverse Leakage @ Vr: 120 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Voltage - DC Reverse (Vr) (Max): 1200 V Part Status: Active Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive |
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