STPSC6H065DI STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 35+ | 4.91 EUR |
| 60+ | 2.8 EUR |
| 100+ | 2.45 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.75 EUR |
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Technische Details STPSC6H065DI STMicroelectronics
Description: DIODE SIC 650V 6A TO220AC INS, Packaging: Tube, Package / Case: TO-220-2 Insulated, TO-220AC, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220AC ins, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote STPSC6H065DI nach Preis ab 2.08 EUR bis 7.12 EUR
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STPSC6H065DI | STMicroelectronics |
 Diode Schottky SiC 650V 6A 2-Pin(2+Tab) TO-220AC Ins Tube |
auf Bestellung 996 Stücke: Lieferzeit 14-21 Tag (e) |
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STPSC6H065DI | STMicroelectronics |
Description: DIODE SIC 650V 6A TO220AC INS Packaging: Tube Package / Case: TO-220-2 Insulated, TO-220AC Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC ins Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
auf Bestellung 751 Stücke: Lieferzeit 10-14 Tag (e) |
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| STPSC6H065DI |
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Hersteller: STMicroelectronics
Diode Schottky SiC 650V 6A 2-Pin(2+Tab) TO-220AC Ins Tube
Diode Schottky SiC 650V 6A 2-Pin(2+Tab) TO-220AC Ins Tube
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 35+ | 4.94 EUR |
| 60+ | 2.87 EUR |
| 100+ | 2.56 EUR |
| 500+ | 2.08 EUR |
| STPSC6H065DI |
|
Hersteller: STMicroelectronics
Description: DIODE SIC 650V 6A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIC 650V 6A TO220AC INS
Packaging: Tube
Package / Case: TO-220-2 Insulated, TO-220AC
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-220AC ins
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 6 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
auf Bestellung 751 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 10+ | 4.64 EUR |
| 50+ | 3.58 EUR |
| 100+ | 3.24 EUR |
| 500+ | 2.63 EUR |