STPSC8H065G-TR STMicroelectronics
Hersteller: STMicroelectronicsCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape
Mounting: SMD
Max. load current: 33A
Kind of package: reel; tape
Semiconductor structure: single diode
Leakage current: 335µA
Case: D2PAK
Type of diode: Schottky rectifying
Max. forward impulse current: 420A
Max. forward voltage: 2.5V
Max. off-state voltage: 650V
Load current: 8A
Anzahl je Verpackung: 1000 Stücke
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Technische Details STPSC8H065G-TR STMicroelectronics
Description: DIODE SIL CARBIDE 650V 8A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 414pF @ 0V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A, Current - Reverse Leakage @ Vr: 80 µA @ 650 V.
Weitere Produktangebote STPSC8H065G-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STPSC8H065G-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
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STPSC8H065G-TR | Hersteller : STMicroelectronics |
Description: DIODE SIL CARBIDE 650V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 414pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 8 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V |
Produkt ist nicht verfügbar |
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STPSC8H065G-TR | Hersteller : STMicroelectronics |
Schottky Diodes & Rectifiers 650 V 8A Schottky silicon carbid T2PAK |
Produkt ist nicht verfügbar |
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| STPSC8H065G-TR | Hersteller : STMicroelectronics |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 8A; D2PAK; reel,tape Mounting: SMD Max. load current: 33A Kind of package: reel; tape Semiconductor structure: single diode Leakage current: 335µA Case: D2PAK Type of diode: Schottky rectifying Max. forward impulse current: 420A Max. forward voltage: 2.5V Max. off-state voltage: 650V Load current: 8A |
Produkt ist nicht verfügbar |