STPST8H100SFY STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A
Current - Reverse Leakage @ Vr: 17 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6000+ | 0.47 EUR |
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Technische Details STPST8H100SFY STMicroelectronics
Description: DIODE SCHOTTKY 100V 8A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A, Current - Reverse Leakage @ Vr: 17 µA @ 100 V, Qualification: AEC-Q101.
Weitere Produktangebote STPST8H100SFY nach Preis ab 0.47 EUR bis 1.71 EUR
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STPST8H100SFY | Hersteller : STMicroelectronics |
Description: DIODE SCHOTTKY 100V 8A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 695 mV @ 8 A Current - Reverse Leakage @ Vr: 17 µA @ 100 V Qualification: AEC-Q101 |
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Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; TO277A; SMD; 100V; 8A; reel,tape Case: TO277A Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 17µA Max. forward voltage: 0.695V Load current: 8A Max. forward impulse current: 200A Max. off-state voltage: 100V Application: automotive industry |
Produkt ist nicht verfügbar |
