auf Bestellung 1022 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.02 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.43 EUR |
| 2000+ | 0.37 EUR |
| 4000+ | 0.35 EUR |
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Technische Details STQ1NC45R-AP STMicroelectronics
Description: MOSFET N-CH 450V 500MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V, Power Dissipation (Max): 3.1W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 450 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V.
Weitere Produktangebote STQ1NC45R-AP
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auf Bestellung 24745 Stücke: Lieferzeit 21-28 Tag (e) |
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| STQ1NC45R-AP | Hersteller : ST |
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auf Bestellung 127998 Stücke: Lieferzeit 21-28 Tag (e) |
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| STQ1NC45R-AP | Hersteller : STM |
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auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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STQ1NC45R-AP Produktcode: 61971
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STQ1NC45R-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 450V 500MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |
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STQ1NC45R-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 450V 500MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Power Dissipation (Max): 3.1W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 450 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V |
Produkt ist nicht verfügbar |