| Anzahl | Preis |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.35 EUR |
| 4000+ | 0.33 EUR |
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Technische Details STQ1NC45R-AP STMicroelectronics
Description: MOSFET N-CH 450V 500MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 450 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 3.1W (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 500mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).
Weitere Produktangebote STQ1NC45R-AP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| STQ1NC45RAP |
auf Bestellung 24745 Stücke: Lieferzeit 21-28 Tag (e) |
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| STQ1NC45R-AP | Hersteller : ST |
 09+ |
auf Bestellung 127998 Stücke: Lieferzeit 21-28 Tag (e) |
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STQ1NC45R-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 450V 500MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 3.1W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
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STQ1NC45R-AP | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 450V 500MA TO92-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 450 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 3.1W (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 500mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Produkt ist nicht verfügbar |