STS10N3LH5 STMicroelectronics
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.79 EUR |
| 2500+ | 0.73 EUR |
| 5000+ | 0.65 EUR |
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Technische Details STS10N3LH5 STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±22V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V.
Weitere Produktangebote STS10N3LH5 nach Preis ab 0.89 EUR bis 2.93 EUR
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STS10N3LH5 | STMicroelectronics |
 Description: MOSFET N-CH 30V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±22V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V |
auf Bestellung 1278 Stücke: Lieferzeit 10-14 Tag (e) |
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| STS10N3LH5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
Description: MOSFET N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 25 V
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.86 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |