STS1DNC45 STMicroelectronics
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
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Technische Details STS1DNC45 STMicroelectronics
Description: MOSFET 2N-CH 450V 0.4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 450V, Current - Continuous Drain (Id) @ 25°C: 400mA, Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V, Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote STS1DNC45 nach Preis ab 1.19 EUR bis 4.93 EUR
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STS1DNC45 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 450V; 0.25A; Idm: 1.6A; 2W; SO8 Power dissipation: 2W Kind of package: reel; tape Case: SO8 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 4.5Ω Drain current: 0.25A Pulsed drain current: 1.6A Gate-source voltage: ±30V Drain-source voltage: 450V |
auf Bestellung 2440 Stücke: Lieferzeit 14-21 Tag (e) |
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STS1DNC45 | STMicroelectronics |
MOSFETs N-Ch 450 Volt 0.4 A |
auf Bestellung 4686 Stücke: Lieferzeit 10-14 Tag (e) |
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STS1DNC45 | STMicroelectronics |
Description: MOSFET 2N-CH 450V 0.4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: 8-SOIC |
auf Bestellung 3268 Stücke: Lieferzeit 10-14 Tag (e) |
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| STS1DNC45 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.25A; Idm: 1.6A; 2W; SO8
Power dissipation: 2W
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.5Ω
Drain current: 0.25A
Pulsed drain current: 1.6A
Gate-source voltage: ±30V
Drain-source voltage: 450V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 450V; 0.25A; Idm: 1.6A; 2W; SO8
Power dissipation: 2W
Kind of package: reel; tape
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.5Ω
Drain current: 0.25A
Pulsed drain current: 1.6A
Gate-source voltage: ±30V
Drain-source voltage: 450V
auf Bestellung 2440 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 43+ | 2.01 EUR |
| 100+ | 1.38 EUR |
| 250+ | 1.26 EUR |
| 500+ | 1.19 EUR |
| STS1DNC45 |
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Hersteller: STMicroelectronics
MOSFETs N-Ch 450 Volt 0.4 A
MOSFETs N-Ch 450 Volt 0.4 A
auf Bestellung 4686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.76 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.14 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.67 EUR |
| 2500+ | 1.48 EUR |
| STS1DNC45 |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 450V 0.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 450V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 25V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 3268 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.93 EUR |
| 10+ | 3.18 EUR |
| 100+ | 2.19 EUR |
| 500+ | 1.78 EUR |