Technische Details STS1HNK60 STM
Description: MOSFET N-CH 600V 300MA 8SO, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3.7V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 300mA (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ).
Weitere Produktangebote STS1HNK60
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| STS1HNK60 | STM |
 N-кан. 600V - 8 Ом - 0.3A SO-8 SuperMESH Power MOSFET Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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STS1HNK60 | STMicroelectronics |
Description: MOSFET N-CH 600V 300MA 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
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STS1HNK60 | STMicroelectronics |
Description: MOSFET N-CH 600V 300MA 8SO Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 300mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STS1HNK60 |
|
Hersteller: STM
N-кан. 600V - 8 Ом - 0.3A SO-8 SuperMESH Power MOSFET Транзистори
N-кан. 600V - 8 Ом - 0.3A SO-8 SuperMESH Power MOSFET Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STS1HNK60 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 300MA 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Description: MOSFET N-CH 600V 300MA 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STS1HNK60 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 300MA 8SO
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 300MA 8SO
Input Capacitance (Ciss) (Max) @ Vds: 156 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH