STS2DNF30L STMicroelectronics


en.CD00002117.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 3A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.64 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details STS2DNF30L STMicroelectronics

Description: MOSFET 2N-CH 30V 3A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 3A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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STS2DNF30L STS2DNF30L STMicroelectronics sts2dnf30l-1852023.pdf MOSFETs N-Ch 30 Volt 3 Amp
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.75 EUR
10+1.29 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.67 EUR
2500+0.58 EUR
5000+0.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STS2DNF30L STS2DNF30L STMicroelectronics en.CD00002117.pdf Description: MOSFET 2N-CH 30V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.48 EUR
14+1.56 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STS2DNF30L sts2dnf30l-1852023.pdf
Hersteller: STMicroelectronics
MOSFETs N-Ch 30 Volt 3 Amp
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+1.75 EUR
10+1.29 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.67 EUR
2500+0.58 EUR
5000+0.56 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
STS2DNF30L en.CD00002117.pdf
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 121pF @ 25V
Rds On (Max) @ Id, Vgs: 110mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 2963 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.48 EUR
14+1.56 EUR
100+1.02 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH