STS30N3LLH6
Produktcode: 40557
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Lieblingsprodukt
Hersteller: ST
Gehäuse: SO-8
Drain-Source-Spannung Uds, V: 30 V
Drain-Strom Idd, A: 30 A
Durchlasswiderstand Rds(on), Ohm: 0,0016 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 3700/29
Bemerkung: -
Montage: SMD
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Weitere Produktangebote STS30N3LLH6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | _PRICE_WITHOUT_VAT |
|---|---|---|---|---|---|
 |
STS30N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 30A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V Power Dissipation (Max): 2.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V |
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Im Einkaufswagen Stück im Wert von UAH |
| STS30N3LLH6 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Description: MOSFET N-CH 30V 30A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 15A, 10V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH