STS4DNF60 STMicroelectronics

Description: MOSFET 2N-CH 60V 4A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V, Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 60V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).