STS4DPF30L
Hersteller: ST
2xP-MOSFET STripFET 4A 30V 2W 0.08Ω Possible substitute: IRF7205TR STS4DPF30L TSTS4DPF30L
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.38 EUR |
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Technische Details STS4DPF30L ST
Description: MOSFET 2P-CH 30V 4A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V, Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 4A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote STS4DPF30L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
STS4DPF30L | STMicroelectronics |
Description: MOSFET 2P-CH 30V 4A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
STS4DPF30L | STMicroelectronics |
Description: MOSFET 2P-CH 30V 4A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Current - Continuous Drain (Id) @ 25°C: 4A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
STS4DPF30L | STMicroelectronics |
MOSFETs P-Ch 30 Volt 4 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STS4DPF30L |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STS4DPF30L |
![]() |
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2P-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STS4DPF30L |
![]() |
Hersteller: STMicroelectronics
MOSFETs P-Ch 30 Volt 4 Amp
MOSFETs P-Ch 30 Volt 4 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


