Technische Details STS5DP3LLH6 STMicroelectronics
Description: MOSFET 2P-CH 30V 5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V, Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, 4.5V Drive, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote STS5DP3LLH6 nach Preis ab 0.87 EUR bis 1.09 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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STS5DP3LLH6 | STMicroelectronics |
 Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| STS5DP3LLH6 | STMicroelectronics |
Description: MOSFET 2P-CH 30V 5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate, 4.5V Drive Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| STS5DP3LLH6 |
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Hersteller: STMicroelectronics
Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R
Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 684+ | 0.95 EUR |
| 1000+ | 0.87 EUR |
| STS5DP3LLH6 |
Hersteller: STMicroelectronics
Description: MOSFET 2P-CH 30V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 30V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 639pF @ 25V
Rds On (Max) @ Id, Vgs: 56mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V
FET Feature: Logic Level Gate, 4.5V Drive
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 492+ | 1.09 EUR |