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STS5PF20V


en.CD00003660.pdf Hersteller: ST

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Technische Details STS5PF20V ST

Description: MOSFET P-CH 20V 5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V.

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STS5PF20V STS5PF20V Hersteller : STMicroelectronics 215307467321333cd00003660.pdf Trans MOSFET P-CH 20V 5A 8-Pin SO N T/R
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STS5PF20V STS5PF20V Hersteller : STMicroelectronics en.CD00003660.pdf Description: MOSFET P-CH 20V 5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 412 pF @ 15 V
Produkt ist nicht verfügbar