Technische Details STS7C4F30L ST
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7A, 4A, Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V, Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.
Weitere Produktangebote STS7C4F30L
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| STS7C4F30L | Hersteller : ST |
 04+ |
auf Bestellung 17500 Stücke: Lieferzeit 21-28 Tag (e) |
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| STS7C4F30L | Hersteller : ST |
07+ SO-8 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| STS7C4F30L | Hersteller : ST |
09+ SO-8 |
auf Bestellung 52579 Stücke: Lieferzeit 21-28 Tag (e) |
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| STS7C4F30L | Hersteller : ST |
SO-8 |
auf Bestellung 55000 Stücke: Lieferzeit 21-28 Tag (e) |
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STS7C4F30L | Hersteller : STMicroelectronics |
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 4A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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STS7C4F30L | Hersteller : STMicroelectronics |
Description: MOSFET N/P-CH 30V 7A/4A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A, 4A Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |