Technische Details STS8DNH3LL ST
Description: MOSFET 2N-CH 30V 8A 8SOIC, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 8A, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote STS8DNH3LL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| STS8DNH3LL | STM |
 MOSFET 2N-ch. Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STS8DNH3LL | STMicroelectronics |
Description: MOSFET 2N-CH 30V 8A 8SOIC Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Current - Continuous Drain (Id) @ 25°C: 8A Drain to Source Voltage (Vdss): 30V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
STS8DNH3LL | STMicroelectronics |
Description: MOSFET 2N-CH 30V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STS8DNH3LL | STMicroelectronics |
MOSFET Dual N-Ch 30 Volt 8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STS8DNH3LL |
|
Hersteller: STM
MOSFET 2N-ch. Транзистори
MOSFET 2N-ch. Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STS8DNH3LL |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 8A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 8A 8SOIC
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 8A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STS8DNH3LL |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 857pF @ 25V
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STS8DNH3LL |
|
Hersteller: STMicroelectronics
MOSFET Dual N-Ch 30 Volt 8A
MOSFET Dual N-Ch 30 Volt 8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH