STS9NF30L

Description: MOSFET N-CH 30V 9A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±18V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 2.5W (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).