Technische Details STSJ60NH3LL ST
Description: MOSFET N-CH 30V 60A 8SOIC, Supplier Device Package: 8-SOIC-EP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 3W (Ta), 50W (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V.
Weitere Produktangebote STSJ60NH3LL
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STSJ60NH3LL | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V 60A 8SOICSupplier Device Package: 8-SOIC-EP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
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