Technische Details STT2PF60L ST
Description: MOSFET P-CH 60V 2A SOT23-6, Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-23-6, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.6W (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote STT2PF60L
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| STT2PF60L | STM |
 Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
STT2PF60L | STMicroelectronics |
Description: MOSFET P-CH 60V 2A SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
STT2PF60L | STMicroelectronics |
Description: MOSFET P-CH 60V 2A SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
STT2PF60L | STMicroelectronics |
MOSFETs P-Ch 60 Volt 2 Amp |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| STT2PF60L |
|
Hersteller: STM
Транзистори
Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STT2PF60L |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 2A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 60V 2A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| STT2PF60L |
|
Hersteller: STMicroelectronics
Description: MOSFET P-CH 60V 2A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 2A SOT23-6
Input Capacitance (Ciss) (Max) @ Vds: 313 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| STT2PF60L |
|
Hersteller: STMicroelectronics
MOSFETs P-Ch 60 Volt 2 Amp
MOSFETs P-Ch 60 Volt 2 Amp
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH