Weitere Produktangebote STT6N3LLH6 nach Preis ab 0.29 EUR bis 1.27 EUR
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STT6N3LLH6 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 30V 6A SOT23-6Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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STT6N3LLH6 | Hersteller : STMicroelectronics |
MOSFETs N-Ch 30V .025Ohm 6A STripFET VI |
auf Bestellung 9059 Stücke: Lieferzeit 10-14 Tag (e) |
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STT6N3LLH6 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 30V 6A SOT23-6 Input Capacitance (Ciss) (Max) @ Vds: 283 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-6 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 6149 Stücke: Lieferzeit 10-14 Tag (e) |
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