Technische Details STTH12010TV1 STMicroelectronics
Description: DIODE MODULE GP 1000V 60A ISOTOP, Current - Reverse Leakage @ Vr: 20 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: 150°C (Max), Supplier Device Package: ISOTOP®, Current - Average Rectified (Io) (per Diode): 60A, Diode Configuration: 2 Independent, Technology: Standard, Reverse Recovery Time (trr): 115 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: ISOTOP, Packaging: Tube.
Weitere Produktangebote STTH12010TV1
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STTH12010TV1 | Hersteller : STMicroelectronics |
 Description: DIODE MODULE GP 1000V 60A ISOTOPCurrent - Reverse Leakage @ Vr: 20 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 60 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: ISOTOP® Current - Average Rectified (Io) (per Diode): 60A Diode Configuration: 2 Independent Technology: Standard Reverse Recovery Time (trr): 115 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Chassis Mount Package / Case: ISOTOP Packaging: Tube |
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STTH12010TV1 | Hersteller : STMicroelectronics |
Category: Diode modules Description: Module: diode; double independent; 1kV; If: 60Ax2; ISOTOP; screw Reverse recovery time: 49ns Max. forward voltage: 1.3V Max. off-state voltage: 1kV Load current: 60A x2 Max. load current: 150A Max. forward impulse current: 750A Type of semiconductor module: diode Semiconductor structure: double independent Case: ISOTOP Mechanical mounting: screw Electrical mounting: screw |
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