STTH208UFY STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE GEN PURP 800V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5000+ | 0.48 EUR |
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Technische Details STTH208UFY STMicroelectronics
Description: DIODE GEN PURP 800V 2A SMBFLAT, Packaging: Tape & Reel (TR), Package / Case: DO-221AA, SMB Flat Leads, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: SMBflat, Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V, Qualification: AEC-Q101.
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Description: DIODE GEN PURP 800V 2A SMBFLAT Packaging: Cut Tape (CT) Package / Case: DO-221AA, SMB Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 2A Supplier Device Package: SMBflat Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 2 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
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