STTH802SFY STMicroelectronics
Hersteller: STMicroelectronicsDescription: DIODE GEN PURP 200V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Reverse Leakage @ Vr: 6 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 6000+ | 0.62 EUR |
| 12000+ | 0.57 EUR |
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Technische Details STTH802SFY STMicroelectronics
Description: DIODE GEN PURP 200V 8A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -40°C ~ 175°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Current - Reverse Leakage @ Vr: 6 µA @ 200 V, Qualification: AEC-Q101.
Weitere Produktangebote STTH802SFY nach Preis ab 0.65 EUR bis 2.01 EUR
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STTH802SFY | Hersteller : STMicroelectronics |
Description: DIODE GEN PURP 200V 8A TO277A Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Current - Reverse Leakage @ Vr: 6 µA @ 200 V Qualification: AEC-Q101 |
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