STU2N80K5 STMicroelectronics
Hersteller: STMicroelectronicsMOSFETs N-channel 800 V, 3.5 Ohm typ 2 A MDmesh K5 Power MOSFET in an IPAK package
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.96 EUR |
| 10+ | 1.36 EUR |
| 100+ | 1.22 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.86 EUR |
| 3000+ | 0.82 EUR |
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Technische Details STU2N80K5 STMicroelectronics
Description: MOSFET N-CH 800V 2A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 5V @ 100µA, Supplier Device Package: TO-251 (IPAK), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V.
Weitere Produktangebote STU2N80K5 nach Preis ab 0.87 EUR bis 3.04 EUR
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STU2N80K5 | Hersteller : STMicroelectronics |
Description: MOSFET N-CH 800V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
auf Bestellung 3034 Stücke: Lieferzeit 10-14 Tag (e) |
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STU2N80K5 | Hersteller : STMICROELECTRONICS |
Description: STMICROELECTRONICS - STU2N80K5 - Leistungs-MOSFET, n-Kanal, 800 V, 2 A, 3.5 ohm, TO-251, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 800V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 45W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm |
auf Bestellung 730 Stücke: Lieferzeit 14-21 Tag (e) |
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STU2N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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| STU2N80K5 | Hersteller : STMicroelectronics |
Trans MOSFET N-CH 800V 2A 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |