STU2N95K5 STMicroelectronics
| Anzahl | Preis |
|---|---|
| 1+ | 3.08 EUR |
| 10+ | 1.1 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.9 EUR |
| 3000+ | 0.77 EUR |
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Technische Details STU2N95K5 STMicroelectronics
Description: MOSFET N-CH 950V 2A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 950 V, Vgs (Max): 30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251 (IPAK), Vgs(th) (Max) @ Id: 5V @ 100µA, Power Dissipation (Max): 45W (Tc), Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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STU2N95K5 | Hersteller : STMicroelectronics |
 Description: MOSFET N-CH 950V 2A IPAKInput Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 950 V Vgs (Max): 30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 45W (Tc) Rds On (Max) @ Id, Vgs: 5Ohm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 2A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
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