STU60N3LH5

STU60N3LH5 STMicroelectronics


STD_P_U60N3LH5_Rev4.pdf
Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details STU60N3LH5 STMicroelectronics

Description: MOSFET N-CH 30V 48A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.

Weitere Produktangebote STU60N3LH5

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
STU60N3LH5 STU60N3LH5 Hersteller : STMicroelectronics stu60n3lh5-1063287.pdf MOSFET N-Channel 30V Pwr Mosfet
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH