STV160NF02LT4 STM

Description: MOSFET N-CH 20V 160A 10POWERSO, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±15V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: 10-PowerSO, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 210W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerSO-10 Exposed Bottom Pad, Packaging: Tape & Reel (TR).