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STV160NF02LT4 STM


STV160NF02L.pdf Hersteller: STM
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Technische Details STV160NF02LT4 STM

Description: MOSFET N-CH 20V 160A 10POWERSO, Packaging: Tape & Reel (TR), Package / Case: PowerSO-10 Exposed Bottom Pad, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V, Power Dissipation (Max): 210W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 10-PowerSO, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V.

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STV160NF02LT4 STV160NF02LT4 Hersteller : STMicroelectronics STV160NF02L.pdf Description: MOSFET N-CH 20V 160A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 10-PowerSO
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 15 V
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